Chapter 73. Influence of Boron and Carbon on the Oxidation of Smtered Silicon Carbide at 1500°C
- Todd Jessen,
- Ersan Ustundag
Published Online: 28 MAR 2008
DOI: 10.1002/9780470294635.ch73
Copyright © 2000 The American Ceramic Society
Book Title
24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 21, Issue 4
Additional Information
How to Cite
Schumacher, C. and Nickel, K. G. (2008) Influence of Boron and Carbon on the Oxidation of Smtered Silicon Carbide at 1500°C, in 24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 21, Issue 4 (eds T. Jessen and E. Ustundag), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294635.ch73
Publication History
- Published Online: 28 MAR 2008
- Published Print: 1 JAN 2000
Book Series:
ISBN Information
Print ISBN: 9780470375693
Online ISBN: 9780470294635
- Summary
- Chapter
- References
Keywords:
- substrate scale interface;
- borosilicate glass;
- pure silicon carbides;
- micro raman spectroscopy;
- electron microprobe analysis
Summary
Sintered Silicon Carbide (SSiC) with varying boron and carbon sintering additive contents were oxidized a t 1500°C in dry and humid environment. Increasing bubble and pit formation was observed with increasing boron carbide (B4C) content. The bubble generation is due to low viscosity, borosilicate droplets in the oxide scale and a gas pressure above atmospheric pressure. Thermochemical calculations revealed that the gas pressure is caused by B4C oxidation beneath the oxide scale. The bubble appearance changed with addition of water to the oxygen atmosphere, because humidity changes the viscosity of the borosilicate glass and a higher gas pressure is generated a t the substrate-scale interface.