Chapter 81. Improvement of High Temperature Corrosion Resistance of Carbon by Ceramic Oxides Coats

  1. Todd Jessen and
  2. Ersan Ustundag
  1. N. Bahlawane and
  2. T. Watanabe

Published Online: 28 MAR 2008

DOI: 10.1002/9780470294635.ch81

24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 21, Issue 4

24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 21, Issue 4

How to Cite

Bahlawane, N. and Watanabe, T. (2008) Improvement of High Temperature Corrosion Resistance of Carbon by Ceramic Oxides Coats, in 24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 21, Issue 4 (eds T. Jessen and E. Ustundag), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294635.ch81

Author Information

  1. Kyushu National Industrial Research Institute, shuku-machi, Tow-shi, Saga 841 Japan

Publication History

  1. Published Online: 28 MAR 2008
  2. Published Print: 1 JAN 2000

ISBN Information

Print ISBN: 9780470375693

Online ISBN: 9780470294635

SEARCH

Keywords:

  • sol gel process;
  • aluminum oxides deposited;
  • preparation process;
  • multi layer system;
  • single layer coating

Summary

Ceramic oxide materials such as Al2O3, YAG, mullite… have proved high corrosion resistance at high temperature. So, we have investigated the deposition of different ceramic oxides thin films on carbon substrates whose utilization is limited below 600°C in air atmosphere in order to improve their corrosion resistance. Indeed, carbon undergoes oxidation reaction to form CO and CO2 inducing drastic weight loss, microstructural degradation and flexural strength decreasing. These damage indicators were recorded to follow the protection effect of deposited ceramic oxide films. The present paper reports the protection efficiency of silicon and aluminum oxides deposited by LF-PECVD and sol-gel process respectively.