Chapter 9. Crack Growth in Sapphire
- Hua-Tay Lin,
- Mrityunjay Singh
Published Online: 26 MAR 2008
DOI: 10.1002/9780470294741.ch9
Copyright © 2002 The American Ceramic Society
Book Title
26th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A: Ceramic Engineering and Science Proceedings, Volume 23, Issue 3
Additional Information
How to Cite
Wiederhom, S. M. and Krause, R. F. (2008) Crack Growth in Sapphire, in 26th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A: Ceramic Engineering and Science Proceedings, Volume 23, Issue 3 (eds H.-T. Lin and M. Singh), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294741.ch9
Publication History
- Published Online: 26 MAR 2008
- Published Print: 1 JAN 2002
Book Series:
ISBN Information
Print ISBN: 9780470375785
Online ISBN: 9780470294741
- Summary
- Chapter
- References
Keywords:
- stress-intensity factor;
- radiation;
- velocity;
- stress sensitivity;
- propagation
Summary
Crack growth was studied in sapphire on both the m-plane and the r-plane (rhombohedral twin plane). The crack growth rate on the m-plane was expressed in terms of a power law function of stress-intensity factor and an Arrhenius function of temperature. Crack growth on r-plane double-torsion specimens was irregular. Spurts of growth on the r-plane were mixed with propagation on rough surfaces. Control of crack growth was not possible. Our studies suggest that r-plane fracture requires a lower K1 than that on the m-plane. We suggest that propagation on the r-plane may be associated with twinning at the crack tip during or prior to crack growth.