Chapter 11. Crystal Structure and Microwave Dielectric Properties of BanLa4Ti3+nO12+3n Homologous Compounds with High Dielectric Constant and High Quality Factor

  1. Waltraud M. Kriven and
  2. Hua-Tay Lin
  1. H. Ohsato1,
  2. Y. Tohdo1,
  3. K. Kakimoto1,
  4. T. Okawa2 and
  5. H. Okabe2

Published Online: 26 MAR 2008

DOI: 10.1002/9780470294826.ch11

27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4

27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4

How to Cite

Ohsato, H., Tohdo, Y., Kakimoto, K., Okawa, T. and Okabe, H. (2008) Crystal Structure and Microwave Dielectric Properties of BanLa4Ti3+nO12+3n Homologous Compounds with High Dielectric Constant and High Quality Factor, in 27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4 (eds W. M. Kriven and H.-T. Lin), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294826.ch11

Author Information

  1. 1

    Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

  2. 2

    Daiken Chemical Co., Ltd., Japan 2-7-9 Hanaten-Nishi, Joto-ku, Osaka 536-0011, Japan

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2003

ISBN Information

Print ISBN: 9780470375846

Online ISBN: 9780470294826

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Keywords:

  • homologous;
  • telecommmunications;
  • synthesized;
  • microwave;
  • resonant fiequency

Summary

Homologous compound BanLa4Ti3+nO12+3n series are one of candidate materials for base station of telecommunications. Crystal structure of the compound with n=1 was refined using X-ray diffraction data of the single crystal obtained. Position of Ba and La ions were determined. Resonator ceramics discs with n=0.8 to 4 synthesized were identified on the precipitated phases and measured the microwave dielectric properties. Homologous compound with n=1 has good microwave dielectric properties: ϵτ = 46, Q·f= 46,000 GHz and ϵτ = −11. Moreover, temperature coefficient of resonant frequency was improved to near zero: 1.3 ppm/°C with high ϵτ of 44 and Q·f of 47,000 GHz