Chapter 8. Growth of Lanio3 Films by Pulsed Laser Deposition

  1. Waltraud M. Kriven and
  2. Hua-Tay Lin
  1. M. H. Ong,
  2. L. Lu and
  3. M. O. Lai

Published Online: 26 MAR 2008

DOI: 10.1002/9780470294826.ch8

27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4

27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4

How to Cite

Ong, M. H., Lu, L. and Lai, M. O. (2003) Growth of Lanio3 Films by Pulsed Laser Deposition, in 27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4 (eds W. M. Kriven and H.-T. Lin), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294826.ch8

Author Information

  1. 10 Kent Ridge Crescent, Singapore 119260, Department of Mechanical Engineering, National University of Singapore, Singapore 119260

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2003

ISBN Information

Print ISBN: 9780470375846

Online ISBN: 9780470294826

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Keywords:

  • lathanium;
  • nickel oxide;
  • microstructures;
  • orientation;
  • morphologies

Summary

Conductive Lathanium Nickel Oxide (LaNiO3) thin films were grown on Si(100) by using KrF excimer pulsed-laser deposition with a (h00) preferred orientation. Their microstructures were investigated using X-ray Θ-2Θ scans and pole figures or cp scans. Grain size and surface morphologies of the deposited LNO film were also examined using atomic force microscopy and scanning electron microscopy. Results show that LaNiO3 film was also grown with an extremely smooth and crack free surface. Four-point probe measurements show low resistivity of 247μΩcm at 300k.