Chapter 9. Capacitor Applications of c-Axis-Oriented Bismuth Layer Structured Ferroelectric Thin Films

  1. Waltraud M. Kriven and
  2. Hua-Tay Lin
  1. Takashi Kojima1,
  2. Takayuki Watanabe1,
  3. Hiroshi Funakubo1,
  4. Yukio Sakashita2 and
  5. Takahiro Oikawa2

Published Online: 26 MAR 2008

DOI: 10.1002/9780470294826.ch9

27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4

27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4

How to Cite

Kojima, T., Watanabe, T., Funakubo, H., Sakashita, Y. and Oikawa, T. (2003) Capacitor Applications of c-Axis-Oriented Bismuth Layer Structured Ferroelectric Thin Films, in 27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: B: Ceramic Engineering and Science Proceedings, Volume 24, Issue 4 (eds W. M. Kriven and H.-T. Lin), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294826.ch9

Author Information

  1. 1

    Tokyo Institute of Technology, Gl-405, 4259, Nagatsuta-cho, Midori-ku Yokohama 226-8502, Japan

  2. 2

    TDK Corporation 570-2, Matsugashita, Minamihatori Narita-shi, Chiba 286-8588, Japan

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2003

ISBN Information

Print ISBN: 9780470375846

Online ISBN: 9780470294826

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Keywords:

  • epitaxial;
  • crystal structure;
  • epitaxial films;
  • film thickness;
  • singl-axis-oriented

Summary

C-axis-oriented epitaxial and preferred-oriented Bi4Ti3O12(BIT) films were deposited on (100)SrRuO3//(100)SrTiO3 and (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. Preferred-oriented films were deposited at 500°C by the sequential introduction of Bi and Ti sources followed by the crystal structure of BIT along c-axis, while the epitaxial films were deposited at 640°C. For the epitaxial films, the relative dielectric constant was almost constant with decreasing the film thickness down to 18 nm and the increase of the electric field of 100 kV/cm. The data of single-axis-oriented film was almost equal to those of epitaxial one. This suggests that not only the epitaxial films but also the single-axis-oriented ones are useful candidates for capacitor applications.