Chapter 29. The Formation of Reaction Bonded Si3N4 at Low Temperatures and in Short Times

  1. John B. Wachtman Jr.
  1. B. W. Sheldon and
  2. J. S. Haggerty

Published Online: 26 MAR 2008

DOI: 10.1002/9780470310557.ch29

A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8

A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8

How to Cite

Sheldon, B. W. and Haggerty, J. S. (1989) The Formation of Reaction Bonded Si3N4 at Low Temperatures and in Short Times, in A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470310557.ch29

Author Information

  1. Materials Processing Center Massachusetts Institute of Technology Cambridge, MA

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 1989

ISBN Information

Print ISBN: 9780470374863

Online ISBN: 9780470310557

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Keywords:

  • chemical vapor infiltration;
  • thermogravimetric analysis;
  • silicon powders;
  • transmission electron microscopy;
  • silicon nitride

Summary

The kinetics and mechanisms of nitriding high purity, SiH4-fderived Si powders were investigated. TGA, X-ray diffraction, FTIR spectroscopy, and TEM techniques were employed. Complete nitridation (>99%) was achieved at 1250°C in less than 10 min, and nearly complete nitridation (97%) was achieved at 1100°C in less than 5 h. The effects of temperature, particle diameter, and surface chemistry were studied and results show that the process is principally controlled by the number of Si3N4 nuclei that form. Reduced temperature, increased Si particle diameter, and surface contamination all reduce the conversion rate through direct effects on nucleation.