Chapter 32. Dense Silicon Nitride Without Additives: Sintering and High Temperature Behaviors

  1. John B. Wachtman Jr.
  1. Isao Tanaka1,
  2. Giuseppe Pezzotti1,
  3. Taira Okamoto1,
  4. Yoshinari Miyamoto1 and
  5. Mitsue Koizumi2

Published Online: 26 MAR 2008

DOI: 10.1002/9780470310557.ch32

A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8

A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8

How to Cite

Tanaka, I., Pezzotti, G., Okamoto, T., Miyamoto, Y. and Koizumi, M. (1989) Dense Silicon Nitride Without Additives: Sintering and High Temperature Behaviors, in A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470310557.ch32

Author Information

  1. 1

    The Institute of Scientific and Industrial Research Osaka University Ibaraki, Osaka 567, Japan

  2. 2

    Institute of Science and Technology Ryukoku University Fushimi, Kyoto 612, Japan

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 1989

ISBN Information

Print ISBN: 9780470374863

Online ISBN: 9780470310557

SEARCH

Keywords:

  • transmission electron microscopy;
  • chemical vapor infiltration;
  • slow crack growth;
  • silica;
  • sintering behaviors

Summary

Fully dense silicon nitrides with different impurity levels are fabricated without additives using hot isostatic pressing. It is found that both densification and β-grain elongation in highly pure material proceed as a liquid phase sintering with silica-melt. Strength at elevated temperatures is strongly dependent on the impurity level Intergranular slow crack growth enhanced significantly by the presence of impurities is concluded to be a reason for the strength degradation at elevated temperatures in low purity material.