Chapter 46. The Characterization of Interfaces in Al2O3-SiCw Composites
- John B. Wachtman Jr.
Published Online: 26 MAR 2008
Copyright © 1989 The American Ceramic Society, Inc.
A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8
How to Cite
Barrett, R. and Page, T. F. (1989) The Characterization of Interfaces in Al2O3-SiCw Composites, in A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470310557.ch46
- Published Online: 26 MAR 2008
- Published Print: 1 JAN 1989
Print ISBN: 9780470374863
Online ISBN: 9780470310557
- chemical vapor infiltration;
- transmission electron microscopy;
- interfacial films;
- electron-energy loss spectroscopy
This paper describes the use of a TEM-based Fresnel (defocused) imaging technique for determining both the presence and width of interfacial bonding films in a hot-pressed Al2O3-SiCw material containing 25% whiskers. The technique is capable of measuring the widths of films <20Å wide to a precision of ≈2Å and provides information inaccessible by other methods. Al2O3-SiC, SiC:SiC, and Al2O3:Al2O3 interfaces have been investigated. Our results clearly show the presence of thin (<10Å) amorphous bonding films in both Al2O3:SiC and SiC:SiC interfaces. These films were found not to change during modest heat treatments for 1 h at 1900°C. By contrast, the Al2O3:Al2O3 interfacial structures seem to be based on dislocation arrays taking up the boundary displacements.