Chapter 57. Metallization of Ceramics by IVD System

  1. John B. Wachtman Jr.
  1. N. Sugiyama,
  2. Y. Katoh and
  3. K. Ogata

Published Online: 28 MAR 2008

DOI: 10.1002/9780470310588.ch57

A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 9/10

A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 9/10

How to Cite

Sugiyama, N., Katoh, Y. and Ogata, K. (1989) Metallization of Ceramics by IVD System, in A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 9/10 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470310588.ch57

Author Information

  1. Nissin Electric Co. Ltd. 47, Umezu-Takase-cho Ukyo-ku, Kyoto, 615 Japan

Publication History

  1. Published Online: 28 MAR 2008
  2. Published Print: 1 JAN 1989

ISBN Information

Print ISBN: 9780470374870

Online ISBN: 9780470310588

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Keywords:

  • chemical vapor deposition;
  • titanium carbide;
  • metal-matrix ceramic composites;
  • exhaust gases;
  • electron micrographs

Summary

A process of metallizing ceramics at room temperature has been developed using an IVD (Ion beam and Vapor Deposition) system. Al2O3 ceramic was metallized with Cu, and AIN ceramic was metallized with Cu, Pt, Al at room temperature with irradiation of an Ar ion beam (energy <25 keV, dose <1018/cm2) during metal deposition. Both ceramics were metallized with adhesive strength of more than 6 kg/mm2. The process is not affected by thermal expansion mismatches between metals and ceramics.