Chapter 62. Chemical Vapor Deposition of TiCx on Al2O3 Substrates
- John B. Wachtman Jr.
Published Online: 28 MAR 2008
Copyright © 1989 The American Ceramic Society, Inc.
A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 9/10
How to Cite
Aparicio, R., Ponthenier, J. L., Hung, F., Anderson, T., Sacks, M. D. and Johnson, G. (1989) Chemical Vapor Deposition of TiCx on Al2O3 Substrates, in A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 9/10 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470310588.ch62
- Published Online: 28 MAR 2008
- Published Print: 1 JAN 1989
Print ISBN: 9780470374870
Online ISBN: 9780470310588
- chemical vapor;
- growth temperature;
- inlet feed composition;
- equilibrium predictions
Deposition of TiCx films on Al2O3 substrates by chemical vapor deposition using TiCl4 and CH4 sources in H2 was studied as a function of growth temperature and inlet feed composition. Arrhenius-type behavior was observed with an apparent activation energy of 129.9 kj/mole. The stoichiometry of the film was measured as a function of inlet composition. The carbon content increased slightly with increasing CH4 partial pressure, in agreement with equilibrium predictions. The TiCx grain size increased with deposition rate, and grains were highly oriented.