Chapter 37. High-Temperature R-Curve Determination of an HIP'ed Silicon Nitride
- John B. Wachtman Jr
Published Online: 28 MAR 2008
Copyright © 1991 The American Ceramic Society, Inc.
Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8
How to Cite
Saliba, H. E., Chuck, L. and Hecht, N. L. (1991) High-Temperature R-Curve Determination of an HIP'ed Silicon Nitride, in Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470313831.ch37
- Published Online: 28 MAR 2008
- Published Print: 1 JAN 1991
Print ISBN: 9780470375099
Online ISBN: 9780470313831
A modified controlled surface flaw fracture mechanics technique was developed to determine the existence of R-curve behavior at high temperature for a hot isostatically pressed (HIP'ed) silicon nitride. Test temperatures ranged from 20° to 1400°C in air. The modified controlled surface flaw technique was used to determine the R-curve behavior of silicon nitride from room temperature to 1400°C in air. The R-curve behavior was determined from the relationship developed by Krause, where KR = k(Δc)m; k and m are constants, and Δc is the crack extension. The residual stress was determined by a first order approximation. The R-curve result at 1400°C was KR = 30.2 c0.169 MPa·m1/2.