Chapter 37. High-Temperature R-Curve Determination of an HIP'ed Silicon Nitride

  1. John B. Wachtman Jr
  1. Hanane E. Saliba1,
  2. Leon Chuck2 and
  3. Norman L. Hecht2

Published Online: 28 MAR 2008

DOI: 10.1002/9780470313831.ch37

Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8

Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8

How to Cite

Saliba, H. E., Chuck, L. and Hecht, N. L. (1991) High-Temperature R-Curve Determination of an HIP'ed Silicon Nitride, in Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470313831.ch37

Author Information

  1. 1

    University of Dayton Dayton, OH 45469–0172

  2. 2

    University of Dayton Research Institute Dayton, OH 45469–0172

Publication History

  1. Published Online: 28 MAR 2008
  2. Published Print: 1 JAN 1991

ISBN Information

Print ISBN: 9780470375099

Online ISBN: 9780470313831

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Keywords:

  • temperature;
  • ceramics;
  • parameters;
  • environment;
  • equilibrium

Summary

A modified controlled surface flaw fracture mechanics technique was developed to determine the existence of R-curve behavior at high temperature for a hot isostatically pressed (HIP'ed) silicon nitride. Test temperatures ranged from 20° to 1400°C in air. The modified controlled surface flaw technique was used to determine the R-curve behavior of silicon nitride from room temperature to 1400°C in air. The R-curve behavior was determined from the relationship developed by Krause, where KR = k(Δc)m; k and m are constants, and Δc is the crack extension. The residual stress was determined by a first order approximation. The R-curve result at 1400°C was KR = 30.2 c0.169 MPa·m1/2.