Chapter 5. Review of VLS SiC Whisker Growth Technology
- John B. Wachtman Jr
Published Online: 28 MAR 2008
Copyright © 1991 The American Ceramic Society, Inc.
Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8
How to Cite
Hollar, W. E. and Kim, J. J. (1991) Review of VLS SiC Whisker Growth Technology, in Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470313831.ch5
- Published Online: 28 MAR 2008
- Published Print: 1 JAN 1991
Print ISBN: 9780470375099
Online ISBN: 9780470313831
The VLS process for the growth of single crystal SiC whiskers has been the subject of research for approximately twenty-five years. Despite this long history, the process has yet to advance beyond the bench scale. This is the result of insufficient understanding of the process and high production costs at this scale. However, recent work at LANL and Carborundum has demonstrated that improvements in the growth process are feasible. Substantial improvements in whisker growth rates and product growth uniformity have been achieved. This paper will review Carborundum's development work to enhance the understanding of the growth process and describe the current development effort toward scale-up of the growth reactor.