Chapter 5. Review of VLS SiC Whisker Growth Technology

  1. John B. Wachtman Jr
  1. William E. Hollar Jr. and
  2. Jonathan J. Kim

Published Online: 28 MAR 2008

DOI: 10.1002/9780470313831.ch5

Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8

Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8

How to Cite

Hollar, W. E. and Kim, J. J. (1991) Review of VLS SiC Whisker Growth Technology, in Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470313831.ch5

Author Information

  1. The Carborundum Company Technology Division Niagara Falls, NY 14302

Publication History

  1. Published Online: 28 MAR 2008
  2. Published Print: 1 JAN 1991

ISBN Information

Print ISBN: 9780470375099

Online ISBN: 9780470313831

SEARCH

Keywords:

  • carbonrndum;
  • morphology;
  • geometry;
  • economics;
  • thermodynamics

Summary

The VLS process for the growth of single crystal SiC whiskers has been the subject of research for approximately twenty-five years. Despite this long history, the process has yet to advance beyond the bench scale. This is the result of insufficient understanding of the process and high production costs at this scale. However, recent work at LANL and Carborundum has demonstrated that improvements in the growth process are feasible. Substantial improvements in whisker growth rates and product growth uniformity have been achieved. This paper will review Carborundum's development work to enhance the understanding of the growth process and describe the current development effort toward scale-up of the growth reactor.