Chapter 51. Direct Microwave Joining of Reaction Bonded Silicon Carbide

  1. John B. Wachtman Jr.
  1. Iftikhar Ahmad and
  2. W. Murray Black

Published Online: 26 MAR 2008

DOI: 10.1002/9780470313954.ch51

Proceedings of the 16th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 13, Issue 7/8

Proceedings of the 16th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 13, Issue 7/8

How to Cite

Ahmad, I. and Black, W. M. (1994) Direct Microwave Joining of Reaction Bonded Silicon Carbide, in Proceedings of the 16th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 13, Issue 7/8 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470313954.ch51

Author Information

  1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, Richard Silberglitt, Technology Assessment & Transfer, Inc., 133 Defense Highway, Suite 212, Annapolis, MD 21401

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 1994

ISBN Information

Print ISBN: 9780470375174

Online ISBN: 9780470313954

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Keywords:

  • microscope;
  • electron;
  • carbide;
  • environments;
  • powders

Summary

A single-mode rectangular resonant cavity operating at 2.45 GHz was used to join, without any interlayer or applied pressure, specimens of reaction bonded silicon carbide. Specimens of 0.95 cm diameter and 0.5 cm height were joined at temperatures 1400–1450°C in 10 to 15 minutes.

Specimens of arbitrary shapes and practical sizes were joined in a commercially available 900 watt multi-mode oven with hybrid heating. The joined specimens were sectioned and examined. The joint was not detectable even by scanning electron microscope observation. On heating silicon bleeds out of reaction bonded silicon carbide. The apparent density of the heated reaction bonded silicon carbide was 3.01 gm/cc as compared 3.05 gm/cc for the as received material. However, the only difference in microstructure was some grain growth of the microwave heated reaction bonded silicon carbide, compared to the as received material.