Chapter 17. Whisker Growth and Composite Fabrication in the SisN4-C System
- John B. Wachtman Jr.
Published Online: 26 MAR 2008
Copyright © 1992 The American Ceramics Society
Proceedings of the 16th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 13, Issue 9/10
How to Cite
Wang, H. and Fischman, G. S. (1994) Whisker Growth and Composite Fabrication in the SisN4-C System, in Proceedings of the 16th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 13, Issue 9/10 (ed J. B. Wachtman), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470313978.ch17
- Published Online: 26 MAR 2008
- Published Print: 1 JAN 1994
Print ISBN: 9780470375198
Online ISBN: 9780470313978
Silicon carbide whiskers were synthesized by carbothermal reduction of silicon nitride. The whisker microstructural study reveals that the whiskers may grow in two stages, core lengthening first followed by whisker thickening. Observations show that the possibility of root growth of the whisker core can not be excluded. Whisker growth via the VLS mechanism in the Si3N4C system was also studied, it is noted that diffusion along the liquid alloy droplet surface may be an important mass-transport path. Partial carbothermal reduction of silicon nitride results in a mixture of Si3N4 powders and SiC whiskers which can be used for making silicon nitride matrix reinforced with silicon carbide whisker composites. The properties of the composites can be improved by optimising both the whisker synthesizing and composite fabricating processes.