Chapter 15. Low Temperature Oxidation of SiC

  1. William J. Smothers
  1. Bulent O. Yavuz and
  2. Larry L. Hench

Published Online: 26 MAR 2008

DOI: 10.1002/9780470318782.ch15

Proceedings of the 6th Annual Conference on Composites and Advanced Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 3, Issue 9/10

Proceedings of the 6th Annual Conference on Composites and Advanced Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 3, Issue 9/10

How to Cite

Yavuz, B. O. and Hench, L. L. (1982) Low Temperature Oxidation of SiC, in Proceedings of the 6th Annual Conference on Composites and Advanced Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 3, Issue 9/10 (ed W. J. Smothers), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470318782.ch15

Author Information

  1. Ceramics Div., Dept. of Materials Science and Engineering, University of Florida Gainesville, FL 32611

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 1982

ISBN Information

Print ISBN: 9780470373972

Online ISBN: 9780470318782

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Keywords:

  • sophisticated;
  • electrophoretic enameling;
  • automation;
  • optimization;
  • parameters

Summary

Low temperature oxidation products of dense polycrystalline SiC were detected with infrared reflection spectroscopy and Auger electron spectroscopy. Evidence for formation of a new compound was found after 1500 min at 1100°C in an oxidizing atmosphere. This supports an oxidation model which proposes development of a Si-O-C ternary phase between bulk SiC and SiO2.