Chapter 6. Liquid Phase Epitaxy of Silicon Carbide

  1. Peter Capper2 and
  2. Michael Mauk3
  1. R. Yakimova and
  2. M. Syväjärvi

Published Online: 4 SEP 2007

DOI: 10.1002/9780470319505.ch6

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

How to Cite

Yakimova, R. and Syväjärvi, M. (2007) Liquid Phase Epitaxy of Silicon Carbide, in Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials (eds P. Capper and M. Mauk), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9780470319505.ch6

Editor Information

  1. 2

    SELEX Sensors and Airborne Systems Infra-Red Limited, PO Box 217, Millbrook, Southampton, SO15 0EG, UK

  2. 3

    School of Engineering and Applied Science, University of Pennsylvania, Philadelphia, PA 19101, USA

Author Information

  1. Dept of Physics, Chemistry and Biology, Linköping University, S-581 83, Linköping, Sweden

Publication History

  1. Published Online: 4 SEP 2007
  2. Published Print: 13 JUL 2007

ISBN Information

Print ISBN: 9780470852903

Online ISBN: 9780470319505

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Keywords:

  • silicon carbide (SiC);
  • liquid phase epitaxy (LPE);
  • silicon carbide liquid phase epitaxy;
  • Si-C phase diagram;
  • slow-cooling technique;
  • vapour–liquid–solid (VLS) method;
  • LPE of SiC under reduced gravity;
  • SiC based device applications

Summary

This chapter contains sections titled:

  • Introduction

  • Fundamental aspects of LPE of SiC

  • Growth methods for SiC LPE

  • Characteristic features of SiC LPE

  • LPE of SiC under reduced gravity

  • Applications

  • References