Chapter 9. Liquid Phase Epitaxy of Hg1–xCdxTe (MCT)

  1. Peter Capper1 and
  2. Michael Mauk2
  1. P. Capper

Published Online: 4 SEP 2007

DOI: 10.1002/9780470319505.ch9

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

How to Cite

Capper, P. (2007) Liquid Phase Epitaxy of Hg1–xCdxTe (MCT), in Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials (eds P. Capper and M. Mauk), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9780470319505.ch9

Editor Information

  1. 1

    SELEX Sensors and Airborne Systems Infra-Red Limited, PO Box 217, Millbrook, Southampton, SO15 0EG, UK

  2. 2

    School of Engineering and Applied Science, University of Pennsylvania, Philadelphia, PA 19101, USA

Author Information

  1. SELEX Sensors and Airborne Systems Infra-Red Limited, PO Box 217, Millbrook, Southampton, SO15 0EG, UK

Publication History

  1. Published Online: 4 SEP 2007
  2. Published Print: 13 JUL 2007

ISBN Information

Print ISBN: 9780470852903

Online ISBN: 9780470319505

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Keywords:

  • photovoltaic arrays and epitaxial layers;
  • LPE and vapor phase epitaxy (VPE);
  • vertical gradient freeze (VGF) processes;
  • impurity doping and heterojunction formation;
  • MCT photodiode designs and processes;
  • SW laser-gated imaging systems;
  • phase diagram and defect chemistry;
  • DLHJ device fabrication

Summary

This chapter contains sections titled:

  • Introduction

  • Growth

  • Material characteristics

  • Device status

  • Summary and future developments

  • References