Chapter 65. Densification and Microstructure Development in Boron Carbide

  1. William Smothers
  1. S. L. Dole and
  2. S. Prochazka

Published Online: 26 MAR 2008

DOI: 10.1002/9780470320280.ch65

Proceedings of the 9th Annual Conference on Composites and Advanced Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 6, Issue 7/8

Proceedings of the 9th Annual Conference on Composites and Advanced Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 6, Issue 7/8

How to Cite

Dole, S. L. and Prochazka, S. (1985) Densification and Microstructure Development in Boron Carbide, in Proceedings of the 9th Annual Conference on Composites and Advanced Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 6, Issue 7/8 (ed W. Smothers), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470320280.ch65

Author Information

  1. General Electric Co., Corporate Research and Development Schenectady, NY 12301

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 1985

ISBN Information

Print ISBN: 9780470374337

Online ISBN: 9780470320280

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Keywords:

  • microstructure;
  • temperature;
  • SIAION;
  • boron carbide;
  • submicron

Summary

Submicron powders of boron carbide with composition near B4C show little tendency to densify via pressureless sintering. Coarsening of the pore-grain structure appears to be the responsible process. Addition of 4 to 12 wt% C retards the coarsening and allows sintering to densities >97% at temperatures ≥2220°C. Abnormal grain growth accompanies this densification but can be inhibited by increased carbon additions. Coarse-grained microstructures in B4C induce microcracking, and this is attributed to thermal expansion anisotropy.