Chapter 11. Grain Boundary Engineering of Semiconducting Tin Oxide Via Sol-Gel Coatings
- William Smothers
Published Online: 27 MAR 2008
Copyright © 1987 The American Ceramic Society, Inc.
14th Automotive Materials Conference: Ceramic Engineering and Science Proceedings, Volume 8, Issue 9/10
How to Cite
Selmi, F. A. and Amarakoon, V. R. W. (1987) Grain Boundary Engineering of Semiconducting Tin Oxide Via Sol-Gel Coatings, in 14th Automotive Materials Conference: Ceramic Engineering and Science Proceedings, Volume 8, Issue 9/10 (ed W. Smothers), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470320419.ch11
- Published Online: 27 MAR 2008
- Published Print: 1 JAN 1987
Print ISBN: 9780470374740
Online ISBN: 9780470320419
Tin oxide powders with and without Sb as a dopant were prepared by coprecipitation from aqueous chloride solutions, A new technique called sol-gel coating was utilized to adjust the surface chemistry of Sb-doped SnO2 powders. Powders coated with a TiO2-SiO2-Na2O sol-gel composition sintered to almost theoretical density and very low resistivity when fired at 1350°Cfor 2 h. Thick films processed using coated Sb-doped SnO2 powders were very sensitive to ethyl alcohol, decreasing the resistance at room temperature by 900 ohms.