Stoichiometric Constraint for Dislocation Loop Growth in Silicon Carbide

  1. Edgar Lara-Curzio,
  2. Jonathan Salem and
  3. Dongming Zhu
  1. Sosuke Kondo1,
  2. Yutai Katoh1 and
  3. Akira Kohyama2

Published Online: 14 DEC 2009

DOI: 10.1002/9780470339497.ch9

Mechanical Properties and Performance of Engineering Ceramics and Composites III

Mechanical Properties and Performance of Engineering Ceramics and Composites III

How to Cite

Kondo, S., Katoh, Y. and Kohyama, A. (2007) Stoichiometric Constraint for Dislocation Loop Growth in Silicon Carbide, in Mechanical Properties and Performance of Engineering Ceramics and Composites III (eds E. Lara-Curzio, J. Salem and D. Zhu), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470339497.ch9

Author Information

  1. 1

    Oak Ridge National Laboratory, Material Science and Technology Division Oak Ridge, TN, 37831 USA

  2. 2

    Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto, 611-0011 Japan

Publication History

  1. Published Online: 14 DEC 2009
  2. Published Print: 29 OCT 2007

ISBN Information

Print ISBN: 9780470196335

Online ISBN: 9780470339497

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Keywords:

  • stoichiometric constraint effects;
  • dislocation loop growth;
  • silicon carbide;
  • transmission electron microscopy;
  • tilted-ion beam

Summary

This chapter contains sections titled:

  • Introduction

  • Irradiation Method

  • Results of Microstructural Examination

  • Kinetic Model

  • Comparison Between Experimental and Calculation

  • Conclusion