Chapter 9. Electrical Properties of Porous SiC

  1. Randall M. Feenstra3 and
  2. Colin E. C. Wood4
  1. D. C. Look1,2 and
  2. Z.-Q. Fang1,2

Published Online: 7 MAR 2008

DOI: 10.1002/9780470751817.ch9

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

How to Cite

Look, D. C. and Fang, Z.-Q. (2008) Electrical Properties of Porous SiC, in Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications (eds R. M. Feenstra and C. E. C. Wood), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9780470751817.ch9

Editor Information

  1. 3

    Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania, USA

  2. 4

    Electronics Division, US Office of Naval Research, Arlington, Virginia, USA

Author Information

  1. 1

    Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA

  2. 2

    Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USA

Publication History

  1. Published Online: 7 MAR 2008
  2. Published Print: 7 MAR 2008

ISBN Information

Print ISBN: 9780470517529

Online ISBN: 9780470751817

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Keywords:

  • porous Si electrical properties;
  • resistivity and hall effect;
  • steady-state current transport;
  • DLTS experiment;
  • capacitance–voltage (CV) and DLTS data;
  • pore potential energy;
  • DLTS signals and forward-bias pulse length tp;
  • DLTS results' analysis

Summary

This chapter contains sections titled:

  • Introduction

  • Resistivity and Hall Effect

  • Deep Level Transient Spectroscopy

  • Sample Considerations

  • Potential Energy Near a Pore

  • DLTS Data and Analysis

  • Acknowledgements

  • References