Chapter 4. Uni-Traveling-Carrier Photodiode (UTC-PD) and PD-EAM Optical Gate Integrating a UTC-PD and a Traveling Wave Electro-Absorption Modulator

  1. Hiroshi Ishikawa
  1. Hiroshi Ito1 and
  2. Satoshi Kodama2

Published Online: 21 AUG 2008

DOI: 10.1002/9780470758694.ch4

Ultrafast All-Optical Signal Processing Devices

Ultrafast All-Optical Signal Processing Devices

How to Cite

Ito, H. and Kodama, S. (2008) Uni-Traveling-Carrier Photodiode (UTC-PD) and PD-EAM Optical Gate Integrating a UTC-PD and a Traveling Wave Electro-Absorption Modulator, in Ultrafast All-Optical Signal Processing Devices (ed H. Ishikawa), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9780470758694.ch4

Editor Information

  1. Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan

Author Information

  1. 1

    Center for Natural Sciences, Kitasato University, Kanagawa, Japan

  2. 2

    NTT Photonics Laboratories, NTT Corporation, Kanagawa, Japan

Publication History

  1. Published Online: 21 AUG 2008
  2. Published Print: 29 AUG 2008

ISBN Information

Print ISBN: 9780470518205

Online ISBN: 9780470758694

Keywords:

  • uni-traveling-carrier photodiode (UTC-PD);
  • heterojunction bipolar transistor (HBT);
  • UTC-PD and PD-EAM optical gate;
  • reliability and standard stress test;
  • new opto-electronic integrated device;
  • UTCPD and high-electron-mobility transistor (HEMT) circuit;
  • traveling-wave-electrode EAM (TW-EAM);
  • PD-EAM Optical Gate Integrating UTC-PD and TW-EAM;
  • DEMUX and ultrafast optical-signal-processing systems

Summary

This chapter contains sections titled:

  • Introduction

  • Uni-traveling-carrier Photodiode (UTC-PD)

  • Concept of a New Opto-electronic Integrated Device

  • PD-EAM Optical Gate Integrating UTC-PD and TW-EAM

  • Summary and Prospects

  • References