Chapter 5. Intersub-Band Transition All-Optical Gate Switches

  1. Hiroshi Ishikawa
  1. Nobuo Suzuki1,
  2. Ryoichi Akimoto2,
  3. Hiroshi Ishikawa3 and
  4. Hidemi Tsuchida2

Published Online: 21 AUG 2008

DOI: 10.1002/9780470758694.ch5

Ultrafast All-Optical Signal Processing Devices

Ultrafast All-Optical Signal Processing Devices

How to Cite

Suzuki, N., Akimoto, R., Ishikawa, H. and Tsuchida, H. (2008) Intersub-Band Transition All-Optical Gate Switches, in Ultrafast All-Optical Signal Processing Devices (ed H. Ishikawa), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9780470758694.ch5

Editor Information

  1. Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan

Author Information

  1. 1

    Corporate Research and Development Center, Toshiba Corporation, Kawasaki, Japan

  2. 2

    Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan

  3. 3

    Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan

Publication History

  1. Published Online: 21 AUG 2008
  2. Published Print: 29 AUG 2008

ISBN Information

Print ISBN: 9780470518205

Online ISBN: 9780470758694

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Keywords:

  • intersub-band transitions (ISBT) in semiconductor quantum wells (QWs);
  • intersub-band transition all-optical gate switches;
  • longitudinal optical (LO) phonon scattering;
  • GaN/AlN ISBT Gate;
  • separate confinement heterostructure (SCH) layer;
  • two-photon absorption (TPA);
  • transverse-magnetic (TM) and ultrafast cross-phase modulation (XPM);
  • cross-phase modulation effects and InGaAs/AlAs/AlAsSb devices

Summary

This chapter contains sections titled:

  • Operation Principle

  • GaN/AlN ISBT Gate

  • (CdS/ZnSe)/BeTe ISBT Gate

  • InGaAs/AlAs/AlAsSb ISBT Gate

  • Cross-phase Modulation in an InGaAs/AlAs/AlAsSb-based ISBT Gate

  • Summary

  • References