Electronic Structure and Band-Gaps of Eu-Doped LaSi3N5 Ternary Nitrides

  1. Waltraud M. Kriven,
  2. Yanchun Zhou,
  3. Miladin Radovic,
  4. Sanjay Mathur and
  5. Tatsuki Ohji
  1. L. Benco1,2,
  2. Z. Lences1 and
  3. P. Sajgalik1

Published Online: 22 NOV 2010

DOI: 10.1002/9780470944103.ch11

Strategic Materials and Computational Design: Ceramic Engineering and Science Proceedings, Volume 31

Strategic Materials and Computational Design: Ceramic Engineering and Science Proceedings, Volume 31

How to Cite

Benco, L., Lences, Z. and Sajgalik, P. (2010) Electronic Structure and Band-Gaps of Eu-Doped LaSi3N5 Ternary Nitrides, in Strategic Materials and Computational Design: Ceramic Engineering and Science Proceedings, Volume 31 (eds W. M. Kriven, Y. Zhou, M. Radovic, S. Mathur and T. Ohji), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470944103.ch11

Author Information

  1. 1

    Institute of Inorganic Chemistry, Slovak Academy of Sciences, Dubravska cesta 9, 84536 Bratislava, Slovakia

  2. 2

    Computational Materials Physics and Center for Computational Materials Science, Sensengasse 8, 1090 Vienna, Austria

Publication History

  1. Published Online: 22 NOV 2010
  2. Published Print: 27 SEP 2010

ISBN Information

Print ISBN: 9780470921913

Online ISBN: 9780470944103

SEARCH

Keywords:

  • electronic structure;
  • band gaps;
  • ternary nitrides;
  • density-functional theory;
  • luminescence

Summary

This chapter contains sections titled:

  • Introduction

  • Structure and Computational Details

  • Results and Discussion

  • Conclusions