Measurements of Irradiation Creep Strain in Silicon Carbide Irradiated with Silicon Ions

  1. Yutai Katoh,
  2. Kevin M. Fox,
  3. Hua-Tay Lin,
  4. Ilias Belharouak,
  5. Sujanto Widjaja and
  6. Dileep Singh
  1. S. Kondo,
  2. T. Koyanagi,
  3. T. Hinoki and
  4. O. Hashitomi

Published Online: 16 NOV 2011

DOI: 10.1002/9781118095386.ch7

Ceramic Materials for Energy Applications: Ceramic Engineering and Science Proceedings, Volume 32

Ceramic Materials for Energy Applications: Ceramic Engineering and Science Proceedings, Volume 32

How to Cite

Kondo, S., Koyanagi, T., Hinoki, T. and Hashitomi, O. (2011) Measurements of Irradiation Creep Strain in Silicon Carbide Irradiated with Silicon Ions, in Ceramic Materials for Energy Applications: Ceramic Engineering and Science Proceedings, Volume 32 (eds Y. Katoh, K. M. Fox, H.-T. Lin, I. Belharouak, S. Widjaja and D. Singh), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118095386.ch7

Publication History

  1. Published Online: 16 NOV 2011
  2. Published Print: 26 SEP 2011

ISBN Information

Print ISBN: 9781118059944

Online ISBN: 9781118095386

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Keywords:

  • irradiation creep strain;
  • silicon carbide irradiated;
  • silicon ions;
  • nuclear reactors;
  • irradiation creep in SiC

Summary

This chapter contains sections titled:

  • Introduction

  • Experimental Procedure

  • Results and Discussion

  • Summary