24. One-Dimensional Field-Effect Transistors

  1. Tianyou Zhai2 and
  2. Jiannian Yao3
  1. Joachim Knoch

Published Online: 25 JAN 2013

DOI: 10.1002/9781118310342.ch24

One-Dimensional Nanostructures: Principles and Applications

One-Dimensional Nanostructures: Principles and Applications

How to Cite

Knoch, J. (2012) One-Dimensional Field-Effect Transistors, in One-Dimensional Nanostructures: Principles and Applications (eds T. Zhai and J. Yao), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118310342.ch24

Editor Information

  1. 2

    Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China

  2. 3

    Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

Author Information

  1. RTWH Aachen University, 52074 Aachen, Germany

Publication History

  1. Published Online: 25 JAN 2013
  2. Published Print: 14 DEC 2012

ISBN Information

Print ISBN: 9781118071915

Online ISBN: 9781118310342

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Keywords:

  • 1D FET;
  • FET, fundamental properties;
  • density of states/quantum capacitance;
  • 1D FETs on effective mass, 1D/2D;
  • scaling to quantum capacitance limit

Summary

This chapter contains sections titled:

  • Introduction

  • An Introduction to Field-Effect Transistors

  • One-Dimensional FETs

  • Conclusion and Outlook

  • References