4. Gettering Processes and the Role of Extended Defects

  1. Sergio Pizzini
  1. Michael Seibt1 and
  2. Vitaly Kveder2

Published Online: 13 JUN 2012

DOI: 10.1002/9781118312193.ch4

Advanced Silicon Materials for Photovoltaic Applications

Advanced Silicon Materials for Photovoltaic Applications

How to Cite

Seibt, M. and Kveder, V. (2012) Gettering Processes and the Role of Extended Defects, in Advanced Silicon Materials for Photovoltaic Applications (ed S. Pizzini), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781118312193.ch4

Editor Information

  1. Department of Materials Science, University of Milano-Bicocca, Milan, Italy

Author Information

  1. 1

    Georg-August-Universität Göttingen, IV. Physikalisches Institut, Göttingen, Germany

  2. 2

    Institute of Solid State Physics, Russian Academy of Science, Chernogolovka, Russia

Publication History

  1. Published Online: 13 JUN 2012
  2. Published Print: 10 AUG 2012

ISBN Information

Print ISBN: 9780470661116

Online ISBN: 9781118312193

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Keywords:

  • gettering processes and the role of extended defects;
  • solar-cell efficiency, and the value of LD;
  • Czochralski grown silicon, metal impurities by oxygen precipitation;
  • external gettering in silicon photovoltaics;
  • transition-metal impurities in silicon and bulk processes;
  • solubility of transition-metal impurities, and gettering;
  • charged metal impurities solubility in extrinsic silicon, physics of gettering;
  • segregation gettering and redistribution, by metal impurities solubility;
  • injection of intrinsic point defects, from surface reactions;
  • bulk processes, affecting gettering and kinetics

Summary

This chapter contains sections titled:

  • Introduction

  • Properties of Transition-Metal Impurities in Silicon

  • Gettering Mechanisms and their Modeling

  • Bulk Processes Affecting Gettering Efficiency and Kinetics

  • Gettering Strategies and Defect Engineering

  • Conclusions

  • Acknowledgements

  • References