Nitrogen Doped ZnO (ZnO:N) Thin Films Deposited by Reactive RF Magnetron Sputtering for PEC Application

  1. TMS
  1. Sudhakar Shet1,2,
  2. Kwang-Soon Ahn3,
  3. Nuggehalli Ravindra2,
  4. Yanfa Yan1 and
  5. Mowafak Al-Jassim1

Published Online: 18 MAY 2012

DOI: 10.1002/9781118356074.ch85

Supplemental Proceedings: Materials Processing and Interfaces, Volume 1

Supplemental Proceedings: Materials Processing and Interfaces, Volume 1

How to Cite

Shet, S., Ahn, K.-S., Ravindra, N., Yan, Y. and Al-Jassim, M. (2012) Nitrogen Doped ZnO (ZnO:N) Thin Films Deposited by Reactive RF Magnetron Sputtering for PEC Application, in Supplemental Proceedings: Materials Processing and Interfaces, Volume 1 (ed TMS), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118356074.ch85

Author Information

  1. 1

    National Renewable Energy Laboratory, Golden, CO 80401 USA

  2. 2

    New Jersey Institute of Technology, Newark, NJ 07102 USA

  3. 3

    School of Display and Chemical Engineering, Yeungnam University, Dae-dong, Kyungsan 712-749, South Korea

Publication History

  1. Published Online: 18 MAY 2012
  2. Published Print: 17 MAR 2012

ISBN Information

Print ISBN: 9781118296073

Online ISBN: 9781118356074

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Keywords:

  • N-doping;
  • photoelectrochemical;
  • thin film

Summary

This chapter contains sections titled:

  • Introduction

  • Experimental Details

  • Results and Discussion

  • Conclusions

  • Acknowledgments