Electrical Characterization in Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory using Bandgap Engineering Method

  1. TMS
  1. Sang-Youl Lee1,
  2. Seung-Dong Yang1,
  3. Jae-Sub Oh2,
  4. Ho-Jin Yun1,
  5. Kwang-Seok Jeong Yu-MiKim1,
  6. Hi-Deok Lee1 and
  7. Ga-Won Lee1

Published Online: 7 JUN 2012

DOI: 10.1002/9781118357002.ch13

Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2

Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2

How to Cite

Lee, S.-Y., Yang, S.-D., Oh, J.-S., Yun, H.-J., Yu-MiKim, K.-S. J., Lee, H.-D. and Lee, G.-W. (2012) Electrical Characterization in Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory using Bandgap Engineering Method, in Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2 (ed TMS), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118357002.ch13

Author Information

  1. 1

    Department of Electronics Engineering, Chungnam National University; 99 Daehak-ro, Yuseong-gu, Daejeon, 305-764, Korea

  2. 2

    National Nanofab Center; 335 Gwahangno Yuseong-gu, Daejeon, 305-806, Korea

Publication History

  1. Published Online: 7 JUN 2012
  2. Published Print: 17 MAR 2012

ISBN Information

Print ISBN: 9781118296097

Online ISBN: 9781118357002

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