The Post-Annealing Effects of N-Doped ZnO Films Deposited by the Atomic Layer Deposition

  1. TMS
  1. Kwang Seok Jeong1,
  2. Yu Mi Kim1,
  3. Ho Jin Yun1,
  4. Seung Dong Yang1,
  5. Sang Youl Lee1,
  6. Young Su Kim2,
  7. Hi Deok Lee1 and
  8. Ga Won Lee1

Published Online: 7 JUN 2012

DOI: 10.1002/9781118357002.ch14

Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2

Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2

How to Cite

Jeong, K. S., Kim, Y. M., Yun, H. J., Yang, S. D., Lee, S. Y., Kim, Y. S., Lee, H. D. and Lee, G. W. (2012) The Post-Annealing Effects of N-Doped ZnO Films Deposited by the Atomic Layer Deposition, in Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2 (ed TMS), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118357002.ch14

Author Information

  1. 1

    Department of Electronics Engineering, Chungnam National University, Daejeon, Korea

  2. 2

    National Nanofab Center, Eoeun-dong, Yusong-gu, Daejeon, 305-806, Korea

Publication History

  1. Published Online: 7 JUN 2012
  2. Published Print: 17 MAR 2012

ISBN Information

Print ISBN: 9781118296097

Online ISBN: 9781118357002

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Keywords:

  • N-doped ZnO;
  • Post-annealing;
  • Atomic Layer Deposition

Summary

This chapter contains sections titled:

  • Introduction

  • Experiment

  • Results and Discussions

  • Conclusion

  • Acknowledgements