P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

  1. TMS
  1. Yu-Mi Kim,
  2. Kwang-Seok Jeong,
  3. Ho-Jin Yun,
  4. Seung-Dong Yang,
  5. Sang-Youl Lee,
  6. Hi-Deok Lee and
  7. Ga-Won Lee

Published Online: 7 JUN 2012

DOI: 10.1002/9781118357002.ch3

Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2

Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2

How to Cite

Kim, Y.-M., Jeong, K.-S., Yun, H.-J., Yang, S.-D., Lee, S.-Y., Lee, H.-D. and Lee, G.-W. (2012) P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition, in Supplemental Proceedings: Materials Properties, Characterization, and Modeling, Volume 2 (ed TMS), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118357002.ch3

Author Information

  1. Dept. of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

Publication History

  1. Published Online: 7 JUN 2012
  2. Published Print: 17 MAR 2012

ISBN Information

Print ISBN: 9781118296097

Online ISBN: 9781118357002

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Keywords:

  • ANZO;
  • ALD;
  • ZnO;
  • A1N;
  • p-type conductive

Summary

This chapter contains sections titled:

  • Introduction

  • Device structure and Experiments

  • Results and Discussions

  • Conclusion

  • Acknowledgements