An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires

  1. Serge Luryi,
  2. Jimmy Xu and
  3. Alex Zaslavsky
  1. A. Haab1,
  2. M. Mikulics1,
  3. T. Stoica1,
  4. B. Kardynal1,
  5. A. Winden1,
  6. H. Hardtdegen1,
  7. D. Grützmacher1 and
  8. E. Sutter2

Published Online: 14 JUN 2013

DOI: 10.1002/9781118678107.ch26

Future Trends in Microelectronics: Frontiers and Innovations

Future Trends in Microelectronics: Frontiers and Innovations

How to Cite

Haab, A., Mikulics, M., Stoica, T., Kardynal, B., Winden, A., Hardtdegen, H., Grützmacher, D. and Sutter, E. (2013) An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires, in Future Trends in Microelectronics: Frontiers and Innovations (eds S. Luryi, J. Xu and A. Zaslavsky), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9781118678107.ch26

Author Information

  1. 1

    Peter Grünberg Institute – 9, Jülich Aachen Research Alliance (JARA), Forschungszentrum Jülich, 52425 Jülich, Germany

  2. 2

    Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, U.S.A.

Publication History

  1. Published Online: 14 JUN 2013
  2. Published Print: 20 MAY 2013

ISBN Information

Print ISBN: 9781118442166

Online ISBN: 9781118678107

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Keywords:

  • alternative dry etching procedure;
  • micro-Raman measurements;
  • non-lithographic fabrication;
  • optical characteristics;
  • photolummescence (PL) measurements;
  • self-assembled ill-nitride nanowires

Summary

This chapter introduces an alternative dry etching procedure for defect-free nanowire (NW) formation from planar Ill-nitride layers grown by metal-organic vapor phase epitaxy (MOVPE). No costly lithographic structuring on the layers is needed to obtain a dense NW array. Since the dry reactive ion etching (RIE) is carried out on bare, as-grown MOVPE layers, it is basically a selfassembly approach with similarities to the fabrication of so-called black Si. The authors checked whether self-assembled Ill-nitride NWs show similar enhancement in light absorbance by performing light transmission and reflection measurements, testing the material as an antireflective coating and verifying whether the analogy to black Si holds not only in the fabrication approach but also in the optical characteristics. They also performed micro-Raman and photolummescence (PL) measurements to check if the reactive ion etching (RIE) process degrades the optical quality of the material.

Controlled Vocabulary Terms

etching; nanofabrication; nanowires; optical properties; Raman spectroscopy