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Metallic Materials Deposition: Metal-Organic Precursors

  1. Charles H. Winter,
  2. Thomas J. Knisley,
  3. Lakmal C. Kalutarage,
  4. Mark A. Zavada,
  5. Joseph P. Klesko,
  6. T. Hiran Perera

Published Online: 17 DEC 2012

DOI: 10.1002/9781119951438.eibc0128.pub2

Encyclopedia of Inorganic and Bioinorganic Chemistry

Encyclopedia of Inorganic and Bioinorganic Chemistry

How to Cite

Winter, C. H., Knisley, T. J., Kalutarage, L. C., Zavada, M. A., Klesko, J. P. and Hiran Perera, T. 2012. Metallic Materials Deposition: Metal-Organic Precursors . Encyclopedia of Inorganic and Bioinorganic Chemistry.

Author Information

  1. Wayne State University, Michigan, USA

Publication History

  1. Published Online: 17 DEC 2012

Abstract

This review describes metal-organic precursors for the growth of metal-containing thin films by chemical vapor deposition (CVD)-based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal-organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high-permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first-row transition-metal films from metal-organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal-organic precursor development is presented for each of these metallic elements.

Keywords:

  • chemical vapor deposition;
  • metal-organic chemical vapor deposition;
  • atomic layer deposition;
  • chemical beam epitaxy;
  • metal-organic vapor phase epitaxy;
  • thin film;
  • oxide;
  • nitride;
  • precursor