1. Low-k Materials: Recent Advances

  1. Mikhail R. Baklanov3,
  2. Paul S. Ho4 and
  3. Ehrenfried Zschech5
  1. Geraud Dubois1 and
  2. Willi Volksen1,2

Published Online: 17 FEB 2012

DOI: 10.1002/9781119963677.ch1

Advanced Interconnects for ULSI Technology

Advanced Interconnects for ULSI Technology

How to Cite

Dubois, G. and Volksen, W. (2012) Low-k Materials: Recent Advances, in Advanced Interconnects for ULSI Technology (eds M. R. Baklanov, P. S. Ho and E. Zschech), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119963677.ch1

Editor Information

  1. 3

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

  2. 4

    Lab for Interconnect and Packaging, The University of Texas at Austin, UT-PRC 10100 Burnet Road, Bldg 160, Mail Code R8650, Austin, TX 78758, USA

  3. 5

    Fraunhofer Institute for Non-Destructive Testing IZFP, Dresden Branch, Maria-Reiche-Strasse 2, 01109 Dresden, Germany

Author Information

  1. 1

    Hybrid Polymeric Materials Group, IBM Almaden Research Center, 650 Harry Road, K-17/E-1, San Jose, CA95120, USA

  2. 2

    Advanced Organic Materials Group, IBM Almaden Research Center, 650 Harry Road, K-17/E-1, San Jose, CA95120, USA

Publication History

  1. Published Online: 17 FEB 2012
  2. Published Print: 24 FEB 2012

ISBN Information

Print ISBN: 9780470662540

Online ISBN: 9781119963677

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Keywords:

  • low-k;
  • dielectric;
  • porous materials;
  • mechanical properties;
  • integration challenges;
  • dual damascene;
  • process damage;
  • post-deposition treatment;
  • silica zeolites;
  • hybrid organic–inorganic;
  • oxycarbosilanes

Summary

Lowering of the insulator dielectric constant to meet current and future microelectronic device performance requirements has come at the expense of decreasing mechanical properties and increased process damage. Whereas mechanical properties directly impact the robustness of the final package, process damage translates into a decrease in electrical properties, such as EM and TDDB, among others. Both issues can be addressed by the proper selection of a dielectric material, which has high network connectivity, i.e. high modulus, and small, preferably noninterconnected pores. In this chapter, we first define the main integration challenges currently encountered. Then solutions to these issues by both alternative processing approaches and development of advanced novel materials are proposed.