13. Carbon Nanotubes for Interconnects

  1. Mikhail R. Baklanov2,
  2. Paul S. Ho3 and
  3. Ehrenfried Zschech4
  1. Mizuhisa Nihei,
  2. Motonobu Sato,
  3. Akio Kawabata,
  4. Shintaro Sato and
  5. Yuji Awano

Published Online: 17 FEB 2012

DOI: 10.1002/9781119963677.ch13

Advanced Interconnects for ULSI Technology

Advanced Interconnects for ULSI Technology

How to Cite

Nihei, M., Sato, M., Kawabata, A., Sato, S. and Awano, Y. (2012) Carbon Nanotubes for Interconnects, in Advanced Interconnects for ULSI Technology (eds M. R. Baklanov, P. S. Ho and E. Zschech), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119963677.ch13

Editor Information

  1. 2

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

  2. 3

    Lab for Interconnect and Packaging, The University of Texas at Austin, UT-PRC 10100 Burnet Road, Bldg 160, Mail Code R8650, Austin, TX 78758, USA

  3. 4

    Fraunhofer Institute for Non-Destructive Testing IZFP, Dresden Branch, Maria-Reiche-Strasse 2, 01109 Dresden, Germany

Author Information

  1. MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

Publication History

  1. Published Online: 17 FEB 2012
  2. Published Print: 24 FEB 2012

ISBN Information

Print ISBN: 9780470662540

Online ISBN: 9781119963677

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Keywords:

  • carbon nanotube;
  • interconnect;
  • via

Summary

Carbon nanotubes (CNTs) exhibit excellent electrical properties that include a long mean free path, a high current-carrying capability and high thermal conductivity. Because of these factors, with their low electrical resistance and large electromigration tolerance, CNTs have been expected for use as aggressively scaled interconnects for next-generation LSIs. We report our trials of using CNT bundles as vertical interconnects, such as contact plugs on CMOS and vias on Cu wire.