7. Process Integration of Interconnects

  1. Mikhail R. Baklanov2,
  2. Paul S. Ho3 and
  3. Ehrenfried Zschech4
  1. Sridhar Balakrishnan,
  2. Ruth Brain and
  3. Larry Zhao

Published Online: 17 FEB 2012

DOI: 10.1002/9781119963677.ch7

Advanced Interconnects for ULSI Technology

Advanced Interconnects for ULSI Technology

How to Cite

Balakrishnan, S., Brain, R. and Zhao, L. (2012) Process Integration of Interconnects, in Advanced Interconnects for ULSI Technology (eds M. R. Baklanov, P. S. Ho and E. Zschech), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119963677.ch7

Editor Information

  1. 2

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

  2. 3

    Lab for Interconnect and Packaging, The University of Texas at Austin, UT-PRC 10100 Burnet Road, Bldg 160, Mail Code R8650, Austin, TX 78758, USA

  3. 4

    Fraunhofer Institute for Non-Destructive Testing IZFP, Dresden Branch, Maria-Reiche-Strasse 2, 01109 Dresden, Germany

Author Information

  1. Intel Corp., Hillsboro, OR 97124, USA

Publication History

  1. Published Online: 17 FEB 2012
  2. Published Print: 24 FEB 2012

ISBN Information

Print ISBN: 9780470662540

Online ISBN: 9781119963677

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Keywords:

  • low-k;
  • air-gap;
  • interconnect;
  • integration;
  • Cu resistivity;
  • narrow lines resistivity;
  • barriers;
  • electromigration

Summary

This chapter aims to introduce the reader to the challenges of on-die interconnect integration as the semiconductor industry continues to march down the scaling path, with leading companies exercising high-volume production at 45 nm and lower nodes as of 2010. Before we dive into the state-of-the-art technology nodes, a brief review of the progression of complexity and incorporation of novel materials into the on-die interconnect architecture during the last twenty years should prove beneficial.