9. Scaling and Microstructure Effects on Electromigration Reliability for Cu Interconnects

  1. Mikhail R. Baklanov5,
  2. Paul S. Ho6 and
  3. Ehrenfried Zschech7
  1. Chao-Kun Hu1,
  2. René Hübner7,
  3. Lijuan Zhang2,
  4. Meike Hauschildt3 and
  5. Paul S. Ho4,6

Published Online: 17 FEB 2012

DOI: 10.1002/9781119963677.ch9

Advanced Interconnects for ULSI Technology

Advanced Interconnects for ULSI Technology

How to Cite

Hu, C.-K., Hübner, R., Zhang, L., Hauschildt, M. and Ho, P. S. (2012) Scaling and Microstructure Effects on Electromigration Reliability for Cu Interconnects, in Advanced Interconnects for ULSI Technology (eds M. R. Baklanov, P. S. Ho and E. Zschech), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119963677.ch9

Editor Information

  1. 5

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

  2. 6

    Lab for Interconnect and Packaging, The University of Texas at Austin, UT-PRC 10100 Burnet Road, Bldg 160, Mail Code R8650, Austin, TX 78758, USA

  3. 7

    Fraunhofer Institute for Non-Destructive Testing IZFP, Dresden Branch, Maria-Reiche-Strasse 2, 01109 Dresden, Germany

Author Information

  1. 1

    IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, USA

  2. 2

    IBM System and Technology Group, Hopewell Junction, NY 12533, USA

  3. 3

    GLOBALFOUNDRIES, Dresden Module One LLC & Co. KG, Wilschdorfer Landstrasse 101, 01109 Dresden, Germany

  4. 4

    Microelectronics Research Center, The University of Texas at Austin, Texas, USA

  5. 6

    Lab for Interconnect and Packaging, The University of Texas at Austin, UT-PRC 10100 Burnet Road, Bldg 160, Mail Code R8650, Austin, TX 78758, USA

  6. 7

    Fraunhofer Institute for Non-Destructive Testing IZFP, Dresden Branch, Maria-Reiche-Strasse 2, 01109 Dresden, Germany

Publication History

  1. Published Online: 17 FEB 2012
  2. Published Print: 24 FEB 2012

ISBN Information

Print ISBN: 9780470662540

Online ISBN: 9781119963677

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