1. Fundamental Properties of ZnO

  1. Cole W. Litton1,
  2. Donald C. Reynolds1,2 and
  3. Thomas C. Collins3
  1. T. C. Collins and
  2. R. J. Hauenstein

Published Online: 28 MAR 2011

DOI: 10.1002/9781119991038.ch1

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

How to Cite

Collins, T. C. and Hauenstein, R. J. (2011) Fundamental Properties of ZnO, in Zinc Oxide Materials for Electronic and Optoelectronic Device Applications (eds C. W. Litton, D. C. Reynolds and T. C. Collins), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119991038.ch1

Editor Information

  1. 1

    Air Force Research Laboratory, Wright-Patterson Air Force Base, OH, USA

  2. 2

    Wright State University, Dayton, OH, USA

  3. 3

    Oklahoma State University, Stillwater, OK, USA

Author Information

  1. Oklahoma State University, Stillwater, OK, USA

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 25 MAR 2011

Book Series:

  1. Wiley Series in Materials for Electronic and Optoelectronic Applications

Book Series Editors:

  1. Peter Capper4,
  2. Safa Kasap5 and
  3. Arthur Willoughby6

Series Editor Information

  1. 4

    SELEX Galileo Infrared Ltd, Southampton, UK

  2. 5

    University of Saskatchewan, Canada

  3. 6

    University of Southampton, UK

ISBN Information

Print ISBN: 9780470519714

Online ISBN: 9781119991038

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Keywords:

  • Band Structure;
  • Optical Properties;
  • Electrical Properties;
  • Band Gap Engineering;
  • Spintronics;
  • field-effect transistors (FETs);
  • “normal modes”;
  • seeded vapor phase transport (SVPT);
  • electron cyclotron resonance (ECR)

Summary

This chapter contains sections titled:

  • Introduction

  • Band Structure

  • Optical Properties

  • Electrical Properties

  • Band Gap Engineering

  • Spintronics

  • Summary

  • References