11. ZnO-Based Ultraviolet Detectors

  1. Cole W. Litton2,
  2. Donald C. Reynolds2,3 and
  3. Thomas C. Collins4
  1. Jian Zhong and
  2. Yicheng Lu

Published Online: 28 MAR 2011

DOI: 10.1002/9781119991038.ch11

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

How to Cite

Zhong, J. and Lu, Y. (2011) ZnO-Based Ultraviolet Detectors, in Zinc Oxide Materials for Electronic and Optoelectronic Device Applications (eds C. W. Litton, D. C. Reynolds and T. C. Collins), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119991038.ch11

Editor Information

  1. 2

    Air Force Research Laboratory, Wright-Patterson Air Force Base, OH, USA

  2. 3

    Wright State University, Dayton, OH, USA

  3. 4

    Oklahoma State University, Stillwater, OK, USA

Author Information

  1. Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, USA

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 25 MAR 2011

Book Series:

  1. Wiley Series in Materials for Electronic and Optoelectronic Applications

Book Series Editors:

  1. Peter Capper5,
  2. Safa Kasap6 and
  3. Arthur Willoughby7

Series Editor Information

  1. 5

    SELEX Galileo Infrared Ltd, Southampton, UK

  2. 6

    University of Saskatchewan, Canada

  3. 7

    University of Southampton, UK

ISBN Information

Print ISBN: 9780470519714

Online ISBN: 9781119991038

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Keywords:

  • Photoconductivity in ZnO;
  • ZnO NW UV Photodetectors;
  • light-emitting diodes (LEDs);
  • deep level transient spectroscopy (DLTS);
  • pulsed laser deposition (PLD);
  • Fourier transform infrared photocurrent (FTIR-PC);
  • Persistent photoconductivity (PPC);
  • defect localized state (DLS)

Summary

This chapter contains sections titled:

  • Introduction

  • Photoconductivity in ZnO

  • ZnO Film-Based UV Photodetectors

  • ZnO NW UV Photodetectors

  • Conclusions

  • Acknowledgements

  • References