3. Electrical Transport Properties in Zinc Oxide

  1. Cole W. Litton1,
  2. Donald C. Reynolds1,2 and
  3. Thomas C. Collins3
  1. B. Claflin and
  2. D. C. Look

Published Online: 28 MAR 2011

DOI: 10.1002/9781119991038.ch3

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

How to Cite

Claflin, B. and Look, D. C. (2011) Electrical Transport Properties in Zinc Oxide, in Zinc Oxide Materials for Electronic and Optoelectronic Device Applications (eds C. W. Litton, D. C. Reynolds and T. C. Collins), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119991038.ch3

Editor Information

  1. 1

    Air Force Research Laboratory, Wright-Patterson Air Force Base, OH, USA

  2. 2

    Wright State University, Dayton, OH, USA

  3. 3

    Oklahoma State University, Stillwater, OK, USA

Author Information

  1. Wright State University, Dayton, OH, USA

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 25 MAR 2011

Book Series:

  1. Wiley Series in Materials for Electronic and Optoelectronic Applications

Book Series Editors:

  1. Peter Capper4,
  2. Safa Kasap5 and
  3. Arthur Willoughby6

Series Editor Information

  1. 4

    SELEX Galileo Infrared Ltd, Southampton, UK

  2. 5

    University of Saskatchewan, Canada

  3. 6

    University of Southampton, UK

ISBN Information

Print ISBN: 9780470519714

Online ISBN: 9781119991038

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Keywords:

  • Hall-Effect Analysis;
  • Donor States and n-type Doping;
  • Hydrogen;
  • Acceptor States and p-type Doping;
  • Photoconductivity;
  • Zinc oxide (ZnO);
  • light-emitting diodes (LEDs);
  • transparent thin film transistors (TTFTs);
  • charge-balance equation (CBE)

Summary

This chapter contains sections titled:

  • Introduction

  • Hall-Effect Analysis

  • Donor States and n-type Doping

  • Hydrogen

  • Acceptor States and p-type Doping

  • Photoconductivity

  • Summary

  • References