7. Vapor Transport Growth of ZnO Substrates and Homoepitaxy of ZnO Device Layers

  1. Cole W. Litton3,
  2. Donald C. Reynolds3,4 and
  3. Thomas C. Collins5
  1. Gene Cantwell1,
  2. Jizhi Zhang1 and
  3. J. J. Song1,2

Published Online: 28 MAR 2011

DOI: 10.1002/9781119991038.ch7

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

How to Cite

Cantwell, G., Zhang, J. and Song, J. J. (2011) Vapor Transport Growth of ZnO Substrates and Homoepitaxy of ZnO Device Layers, in Zinc Oxide Materials for Electronic and Optoelectronic Device Applications (eds C. W. Litton, D. C. Reynolds and T. C. Collins), John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119991038.ch7

Editor Information

  1. 3

    Air Force Research Laboratory, Wright-Patterson Air Force Base, OH, USA

  2. 4

    Wright State University, Dayton, OH, USA

  3. 5

    Oklahoma State University, Stillwater, OK, USA

Author Information

  1. 1

    ZN Technology, Inc., Brea, CA, USA

  2. 2

    Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 25 MAR 2011

Book Series:

  1. Wiley Series in Materials for Electronic and Optoelectronic Applications

Book Series Editors:

  1. Peter Capper6,
  2. Safa Kasap7 and
  3. Arthur Willoughby8

Series Editor Information

  1. 6

    SELEX Galileo Infrared Ltd, Southampton, UK

  2. 7

    University of Saskatchewan, Canada

  3. 8

    University of Southampton, UK

ISBN Information

Print ISBN: 9780470519714

Online ISBN: 9781119991038

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