Chapter 2. Compound Semiconductor Device Structures

  1. Prof. Kenneth A. Jackson
  1. William E. Stanchina and
  2. Juan F. Lam

Published Online: 19 DEC 2007

DOI: 10.1002/9783527611782.ch2

Compound Semiconductor Devices: Structures and Processing

Compound Semiconductor Devices: Structures and Processing

How to Cite

Stanchina, W. E. and Lam, J. F. (2007) Compound Semiconductor Device Structures, in Compound Semiconductor Devices: Structures and Processing (ed K. A. Jackson), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527611782.ch2

Editor Information

  1. The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

Author Information

  1. Hughes Research Laboratories, Malibu, CA, U.S.A.

Publication History

  1. Published Online: 19 DEC 2007
  2. Published Print: 15 OCT 1998

ISBN Information

Print ISBN: 9783527295968

Online ISBN: 9783527611782

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Keywords:

  • radiofrequency;
  • pseudomorphic;
  • horizontal Bridgman;
  • modulation-doped;
  • heterostructure

Summary

This chapter contains sections titled:

  • Introduction

  • Key Material Properties

  • Group III-V Materials Preparation

  • Field-Effect Transistors (FETs)

  • Heterojunction Bipolar Transistors

  • Novel Semiconductor Laser Diodes

  • References