Chapter 3. Compound Semiconductor Device Processing

  1. Prof. Kenneth A. Jackson
  1. John M. Parsey Jr

Published Online: 19 DEC 2007

DOI: 10.1002/9783527611782.ch3

Compound Semiconductor Devices: Structures and Processing

Compound Semiconductor Devices: Structures and Processing

How to Cite

Parsey, J. M. (1998) Compound Semiconductor Device Processing, in Compound Semiconductor Devices: Structures and Processing (ed K. A. Jackson), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527611782.ch3

Editor Information

  1. The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

Author Information

  1. Advanced Materials, Wireless Research and Development Laboratory, Wireless Subscriber Systems Group, Motorola Inc., Tempe, AZ, U.S.A.

Publication History

  1. Published Online: 19 DEC 2007
  2. Published Print: 15 OCT 1998

ISBN Information

Print ISBN: 9783527295968

Online ISBN: 9783527611782

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Keywords:

  • transconductance;
  • semiconductor energy gap;
  • diffusion coefficient;
  • conduction band energy;
  • sidegating voltage

Summary

This chapter contains sections titled:

  • Introduction

  • Doping Processes

  • Isolation Methods

  • Diffusion

  • Etching Techniques

  • Ohmic Contacts

  • Annealing

  • Dielectrics and Interlayer Isolation

  • Resistors

  • Metallization and Liftoff Processes

  • Backside Processing and Die Separation

  • References