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Appendix 3: Electron Mobility and Compensation Ratios at 77 K in n-Type GaAs and InP

  1. Prof. Anthony C. Jones1 and
  2. Prof. Paul O'Brien2

Published Online: 7 OCT 2008

DOI: 10.1002/9783527614639.app3

CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

How to Cite

Jones, A. C. and O'Brien, P. (2008) Appendix 3: Electron Mobility and Compensation Ratios at 77 K in n-Type GaAs and InP, in CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications, Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527614639.app3

Author Information

  1. 1

    Rosetree Cottage, Georgian Close, Eccleston Park, Prescot, Merseyside L35 7JW, United Kingdom

  2. 2

    Department of Chemistry, Imperial College of Science, Technology and Medicine, South Kensington, London SW7 2AY, United Kingdom

Publication History

  1. Published Online: 7 OCT 2008
  2. Published Print: 10 APR 1997

ISBN Information

Print ISBN: 9783527292943

Online ISBN: 9783527614639

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