Chapter 3. MOVPE of III–V Compounds

  1. Prof. Anthony C. Jones1 and
  2. Prof. Paul O'Brien2

Published Online: 7 OCT 2008

DOI: 10.1002/9783527614639.ch3

CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

How to Cite

Jones, A. C. and O'Brien, P. (1997) MOVPE of III–V Compounds, in CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications, Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527614639.ch3

Author Information

  1. 1

    Rosetree Cottage, Georgian Close, Eccleston Park, Prescot, Merseyside L35 7JW, United Kingdom

  2. 2

    Department of Chemistry, Imperial College of Science, Technology and Medicine, South Kensington, London SW7 2AY, United Kingdom

Publication History

  1. Published Online: 7 OCT 2008
  2. Published Print: 10 APR 1997

ISBN Information

Print ISBN: 9783527292943

Online ISBN: 9783527614639

SEARCH

Keywords:

  • group III antimonides;
  • β-hydride elimination reaction;
  • radical disproportionation;
  • hypervalent;
  • t-butyldimethylantimony;
  • in[BOND]C bond homolysis

Summary

The prelims comprise:

  • Introduction

  • Growth of Gallium Arsenide (GaAs)

  • Growth of Aluminum Gallium Arsenide (AlGaAs)

  • Growth of Indium-Based Alloys

  • Growth of Antimony-Based Alloys

  • Growth of Group III Nitrides

  • Metalorganic Dopant Sources for III-V Alloys

  • Hydrogen Passivation of Intentional Dopants

  • Selective Area Epitaxy

  • Photo-Assisted Growth of III-V Materials

  • References