Chapter 1. Introduction

  1. Prof. Dr. Toivo T. Kodas5 and
  2. Prof. Dr. Mark J. Hampden-Smith6
  1. Rahul Jairath1,
  2. Ajay Jain2,
  3. Robert D. Tolles3,
  4. Mark J. Hampden-Smith4 and
  5. Toivo T. Kodas2

Published Online: 26 DEC 2007

DOI: 10.1002/9783527615858.ch1

The Chemistry of Metal CVD

The Chemistry of Metal CVD

How to Cite

Jairath, R., Jain, A., Tolles, R. D., Hampden-Smith, M. J. and Kodas, T. T. (1994) Introduction, in The Chemistry of Metal CVD (eds T. T. Kodas and M. J. Hampden-Smith), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527615858.ch1

Editor Information

  1. 5

    Department of Chemical Engineering, University of New Mexico, Albuquerque, NM 87131, USA

  2. 6

    Department of Chemistry, University of New Mexico, Albuquerque, NM 87131, USA

Author Information

  1. 1

    National Semiconductor Corporation, 2900 Semiconductor Drive, Santa Clara, CA 95052

  2. 2

    Department of Chemical Engineering, University of New Mexico, Albuquerque, NM 87131

  3. 3

    SEMATECH, 2706 Montopolis Drive, Austin, TX 78741

  4. 4

    Department of Chemistry, University of New Mexico, Albuquerque, NM 87131

Publication History

  1. Published Online: 26 DEC 2007
  2. Published Print: 25 AUG 1994

ISBN Information

Print ISBN: 9783527290710

Online ISBN: 9783527615858

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Keywords:

  • silicon devices;
  • metal-silicon contacts;
  • diffusion barrier layers;
  • contact layers;
  • metal deposition techniques

Summary

This chapter contains sections titled:

  • Introduction

  • Current Interconnect Schemes in Silicon Devices

  • Metallization Requirements for the Year 2001 in Silicon-Based Technologies

  • Metal Deposition Techniques

  • Manufacturing Issues in CVD Processes

  • Summary and Conclusions