Chapter 1. Scanning Tunneling Microscopy of Semiconductor Electrodes

  1. Prof. Dr. Heinz Gerischer2 and
  2. Prof. Charles W. Tobias3
  1. Philippe Allongue

Published Online: 4 MAR 2008

DOI: 10.1002/9783527616787.ch1

Advances in Electrochemical Science and Engineering, Volume 4

Advances in Electrochemical Science and Engineering, Volume 4

How to Cite

Allongue, P. (1995) Scanning Tunneling Microscopy of Semiconductor Electrodes, in Advances in Electrochemical Science and Engineering, Volume 4 (eds H. Gerischer and C. W. Tobias), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527616787.ch1

Editor Information

  1. 2

    Fritz-Haber-Institut der MPG, Faradayweg 4-6, D-1000, Berlin 33

  2. 3

    Dept. of Chemical Engineering, University of California, Berkeley, California 94720, USA

Author Information

  1. Laboratoire de Physique des Liquides et Electrochimie, UPR 15 du CNRS, Associé a l'Université P. & M. Curie, 4 Place Jussieu, Tour 22, F-75005 Paris, France

Publication History

  1. Published Online: 4 MAR 2008
  2. Published Print: 29 JUN 1995

ISBN Information

Print ISBN: 9783527292059

Online ISBN: 9783527616787

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Keywords:

  • atomic force microscopy;
  • fast fourier transform;
  • local density of states;
  • molecular beam epitaxy;
  • photoluminescent

Summary

This chapter contains sections titled:

  • Introduction

  • The Tunneling Junction

  • STM of Semiconductors

  • Spectroscopic Characterization

  • Studies of Electrochemical Reactions at Semiconductors Electrodes

  • Further Perspectives

  • General Conclusions

  • References