Chapter 122. In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors

  1. Prof. Norbert Auner3 and
  2. Prof. Johann Weis4
  1. F. Hamelmann1,
  2. G. Haindl1,
  3. J. Hartwich1,
  4. U. Kleineberg1,
  5. U. Heinzmann1,
  6. A. Klipp2,
  7. S. H. A. Petri2 and
  8. P. Jutzi2

Published Online: 28 APR 2008

DOI: 10.1002/9783527619917.ch122

Organosilicon Chemistry IV: From Molecules to Materials

Organosilicon Chemistry IV: From Molecules to Materials

How to Cite

Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Heinzmann, U., Klipp, A., Petri, S. H. A. and Jutzi, P. (2000) In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors, in Organosilicon Chemistry IV: From Molecules to Materials (eds N. Auner and J. Weis), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527619917.ch122

Editor Information

  1. 3

    Inst. für Anorganische Chemie, der Universität Frankfurt, Marie-Curie-Strasse 11, D-60439 Frankfurt am Main, Germany, Phone: 0 69/7 98-29180, -29591, Fax: 069/798-29188

  2. 4

    Wacker-Chemie GmbH, Geschäftsbereich S, Werk Burghausen, Johannes-Hess-Strasse 24, D-84489 Burghausen, Germany

Author Information

  1. 1

    Fakultät für Physik, Universität Bielefeld Universitätsstr. 25, D-33615 Bielefeld, Germany Tel.: Int. code + (521)106 5465 - Fax.: Int. code + (521)106 6001

  2. 2

    Fakultät für Chemie, Universität Bielefeld Universitätsstr. 25, D-33615 Bielefeld, Germany Tel.: Int. code + (521)106 6181—- Fax.: Int. code+(521)106 6026

Publication History

  1. Published Online: 28 APR 2008
  2. Published Print: 17 JAN 2000

ISBN Information

Print ISBN: 9783527298549

Online ISBN: 9783527619917

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Keywords:

  • thin films;
  • MOCVD;
  • hot-filament;
  • multilayer

Summary

W/Si multilayers with 14 double layers (double layer spacing d = 24 nm) were deposited on Si [1001 substrates with hot-filament metal organic chemical vapor deposition (MOCVD). The layer thickness and growth was controlled by an in-situ X-ray reflectivity measurement. Cyclopentadienyl substituted silanes (C5Me5)Si2H5 and (C5Me4H)SiH3 were used as silicon precursors, while W(CO)6 was used for the tungsten deposition. The resulting multilayers were characterized by cross-section transmission electron microscopy (XTEM) and sputter auger electron spectroscopy (AES). In addition, the fragmentation of the silicon precursors was studied by mass spectroscopy